ASDAM

ASDAM 2026

Conference Programme

Three days of invited talks, scientific presentations, networking and social events.

Presentation Guidelines

Invited talks: 30–35 minutes + Q&A

Regular talks: 12 minutes + Q&A

Presentation format: PPTX or PDF; online or server-based presentations are not supported.

Poster size: 100 × 80 cm

Day 1

Wednesday, 7 October 2026

08:00–09:00

Registration

09:15–09:30

Introduction & Welcome

09:30–10:10

Invited Talk

Mattia Capriotti

GaN Bidirectional Switches: The New Frontier

10:15–10:30

Pao-Chi Yao

Investigation of High-Voltage Off-State Reliability Degradation Mechanisms in Commercial GaN HEMTs

10:30–10:45

M. Blaho

Effect of MOCVD growth parameters on performance of n++GaN/InAlN/AlN/GaN HEMTs for mixed-signal applications

10:45–11:00

S. Kaya

TCAD Analysis of GaN Thickness and Doping Effects on n-GaN/p-4H-SiC Avalanche Photodiodes

11:00–11:20

Coffee Break

11:20–12:00

Invited Talk

Aurelien Gauthier-Brun

GaN power platform for applications up to 100V

12:00–12:15

J. Priesol

Monte Carlo Simulation of EBIC Line Profiles across GaN, 4H-SiC, and β-Ga₂O₃ p-n Junctions: A Comparative Study

12:15–12:30

R. Stoklas

Optimization of AZ 12XT Photoresist Coverage on Vertical GaN Pillar Sidewalls via Development Process Engineering

12:30–12:45

I. Kundrata

Alternative method for conformal electrode powder coatings

12:45–13:00

M. Pecz

Atomic layer testing substrate (ALTS) for conformality evaluation of ALD processes

13:00–14:00

Lunch

14:00–14:40

Invited Talk

Konrad Szaciłowski

Coordination compounds as a playground for neuromorphic computing

14:40–14:55

M. Titze

Towards Polymer Fingerprinting in High Resolution Dynamic Secondary Ion Mass Spectrometry

14:55–15:10

A. Petrovic

Inverse-designed grating-coupled optical interfaces in silicon nitride photonic chips

15:10–15:25

D. Pudiš

On-chip dielectric Bragg mirrors prepared by laser lithography

15:25–15:40

S. E. Panasci

Highly uniform and large-area monolayer MoS2 via Direct Liquid Injection CVD and integration onto wide-band gap semiconductors

15:40–15:55

Yogesh Thakur

Investigation of Dielectric Material Dependent Performance in TIPS-Pentacene Organic Field-Effect Transistor Hydrogen Sensors

15:55–16:15

Coffee Break

16:15–16:55

Invited Talk

Jan Kuzmík

Vertical GaN transistor with semi-insulating channel

Day 2

Thursday, 8 October 2026

08:30–09:10

Invited Talk

Joel Tacla Asubar

Overcoming the Mobility-Threshold Voltage Trade-Off in Normally-Off AlGaN/GaN MIS-HEMTs via Shallow Recess and Oxygen Plasma Interface Engineering

09:15–09:30

S. G. Vadlamudi

Normally-off β-Ga2O3 channel MOSFETs grown on Sapphire substrates with graded (AlxGa1-x)2O3 buffer using MOCVD: Gate leakage analysis

09:30–09:45

C. Tamin

β-Ga2O3/Se-based heterojunctions for UV and X-ray photodetectors

09:45–10:00

Zeyu Chi, Ekaterine Chikoidze

Effect of Anderson disorder for p-type β-Ga2O3

10:00–10:15

T. Dittrich

Combined photocurrent and surface photovoltage spectroscopy for defect analysis in Ga2O3 epitaxial layers

10:15–10:30

O. Heribi

PICTS investigation of Zinc acceptor related defect in β-Ga2O3

10:30–10:50

Coffee Break

10:50–11:30

Invited Talk

Manabu Arai

High power GaN-based HEMTs

11:30–11:45

Changzi Lu

Self-aligned Mesa Ga2O3 High-voltage Schottky diode

11:45–12:00

Philippe Nugues

Deep level defects in β-Ga₂O₃ vertical Schottky diodes: impact of technology

12:00–12:15

Karol Kalna

Density Functional Theory Study of the Exceptional Thermal Conductivity and Band Structure in Cubic Boron Arsenide

12:15–12:30

Maximilian Ley

Quantifying the Overestimation of Specific Contact Resistivity of Ohmic Contacts to n-Type 4H-SiC via Additional Contact End Resistance TLM Measurement

12:30–12:45

Elias Said Nuri

Simultaneous “On-the-Fly” Dynamic-RON and Dynamic-QOSS Characterization in Wide-Bandgap Devices

12:45–13:00

Şenol Kaya

Development and First Electrical Assessment of an Ion-Implanted NürFET Dosimeter

13:00–14:00

Lunch

14:00–14:40

Invited Talk

Roberto Fornari

Hetero-epitaxial growth and properties of different gallium oxide polymorphs

14:40–15:20

Invited Talk

Oliver Hilt

Gallium oxide-based high-voltage transistors towards power switching – and other UWBG device competitors rising at the horizon

15:20–15:35

Rokas Grigaliūnas

High-Power Pulse Forming Methods for Dynamical and Electromagnetic Compatibility Testing

15:35–15:50

M. Florovič

Lithium Niobate Electro-Optic Modulator DC and RF Characterization

15:50–16:05

L. Vozarova

PCell-Level Enforcement of Polysilicon and Metals Minimum Density in BCD Technologies

View Poster Session Programme · 29 posters

M. HusákSensor system for sleep analysis

Adam BouřaDetermination of key thermoelectrical material properties of the TEC/TEG module and creation of its simulation model in ANSYS

A. LaurenčíkováImpact of platinum quality on the growth of few-layer PtSe2 films for optoelectronic devices

Akash PatnaikLow doping efficiency in Sn-doped β-Ga2O3 (-201) thin films

A. ŠatkaDiagnostics of p-GaN/AlGaN/GaN HEMT gate stacks using cross-sectional SEM-EBIC

A. ShendiTuning Synthesis Conditions to Boost Supercapacitive Performance of 2D undoped and Cu-doped MoS2 Nanocomposites

Viktoria PikulikovaCompact power and wavelength splitters for silicon nitride photonic integrated circuits

Adam BouřaSpice simulation and efficiency measurement of DC-to-DC converters used for energy harvesting with thermoelectric generators.

Dagmar GregušováDigital etching in GaN-based transistor technology

M. Goraus1D and 2D blazed gratings prepared by laser interference lithography

Jozef KozarikAn Improved Wafer-Level Test Setup for Dynamic Characterization of GaN HEMTs

Juraj NevřelaDevelopment and Evaluation of Charge-Modulated Field-Effect Transistor (CMFET) Structures for Glucose Detection

Lubica StuchlikovaCharacterization of Defect Distribution and Electrical Properties of Neutron-Irradiated pGaN Gate E-Mode GaN HEMTs

M. TalackoElectrical and Spectroscopic Characterization of 4H-SiC Radiation Detectors with an Ultrathin YSZ High-k Interlayer

Martin BerkiComponent-Level Analysis of a WGAN-GP UNet–Transformer for ECG Reconstruction under Electrode Degradation

Matej MatusElectrically Active States in DNTT OFETs Investigated by DLTFS and Quantum-Chemical Simulations

M. PecikRespiration Monitoring: Comparative Analysis of Direct and Indirect Multisensor Approaches for Wearable Electronics

Ondrej GalloLithium-ion battery state of health estimation based on data-driven techniques

Mishal NadeemMagnetron Sputtering Synthesis and irradiation response of MgSiN2

Ondrej KokavecAssembly Procedures and Process Flow in Manufacturing of Case-Type Power Modules

Ondrej PohorelecDetermination of secondary-ions yield in SIMS depth profiling of Si and C ions implanted in β-Ga2O3 epitaxial layers

P. PríbytnýSimulation-Based Optimization of Half-Bridge Power MOSFET Converter Packaging

Pavel ŠádekEvaluation of Anti-Series MOSFET Configurations for electronic fuse (eFuse) or Ideal Diode

Tarak HidouriPhotophysical properties of Lead Free CsSnI3/GaN Hybrid Heterostructure for Dual Mode, Broadband and Self-Powering Photo-Sensing

Timea Ema KrajčovičováGraphene-Mediated Growth of Few-Layer PtSe2

Tomas VinczeSolution-Processed dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] Organic Synaptic Transistors

Vladimír JaníčekDesign and optimization of a fully integrated electrostatic MEMS energy harvester with active power management

Vratislav RežoMethodology for Safe Thermal Resistance Measurement of Power Modules Using Siemens T3Ster According to JESD51 Standards

Zdenko ZápražnýUnveiling the true dislocation density in epitaxial GaN: A comparative study of X-ray asymptotic tails and FWHM analysis

Day 3

Friday, 9 October 2026

08:30–09:10

Invited Talk

Michaela Sojková

Towards Scalable TMD Electronics: Fabrication Strategies and Device Challenges

09:15–09:30

A. Chvála

Model Order Reduction for Faster Thermal Simulations of a Power Module

09:30–09:45

M. Amira

Neural Network–Based Electrical Modeling Coupled with 3D FEM Thermal Simulation for SiC Power Devices

09:45–10:00

M. Florovič

Average Junction Temperature Determination in SiC MOSFETs Considering Charge Trapping Phenomena

10:15–10:30

K. Kovács

Threshold-Voltage Shift of the DC Transfer Characteristic as a Degradation Indicator for SiC Power MOSFETs under Repetitive Type-I Short-Circuit Stress

10:30–10:50

Coffee Break

10:50–11:30

Invited Talk

Kimmo Mustonen

van der Waals Confinement as a Platform for Novel Two-Dimensional Materials

11:30–11:45

M. Dehghan

Self-Rectifying dynamic diode memristor based on amorphous TiO2 thin film by atomic layer deposition

11:45–12:00

S. Haršány

Trap-Governed Synaptic Behaviour in a DNTT Organic Field-Effect Transistor: A Calibrated Finite-Element Model

12:00–12:15

E. Gruodis

Open-Source EDA Toolchain for Analog IC Design in IHP SG13G2 130 nm BiCMOS: A 300 MHz SAR ADC Comparator with Monte Carlo Mismatch Verification

12:15–12:30

R. Ondica

Area-Optimized Passive Components for On-chip DC-DC Voltage Converter

12:30–12:45

L. Gardian

Acoustic Characterisation of State-of-Charge and Degradation in Lithium-Ion Cells via Through-Transmission Ultrasound Defectoscopy

12:45–13:00

B. Bajla

Model-Based Benchmarking of Pulse Charging Protocols for Lithium-Ion Batteries

13:00–14:00

Lunch

14:00–14:40

Invited Talk

Po-Hsueh Chang

BioMEMS and biomedical semiconductor electronics

14:40–14:55

N. Kumar

P-to-N conductance transition in WS₂ thin films as a gas signature for NH₃ sensing.

14:55–15:10

P. Nemec

Influence of Sensor Geometry on the Dynamic Hydrogen Response of TiO₂ Gas Sensors

15:10–15:25

F. Gerhát

Temperature and Humidity Control Extensions for a Laboratory Gas-Mixing Test System

15:25–15:40

E. Vavrinsky

Advanced Wearable Smart Patch for Single-Channel EEG and ePPG Sleep Staging in Parkinson's Disease Screening

Invited Speakers

ASDAM 2026 will welcome distinguished invited speakers from leading universities, research institutes, and industry, presenting the latest advances in semiconductor devices, materials, electronics, and related technologies.